[1] Gregory Auton, Jiawei Zhang, Roshan Krishna Kumar, Hanbin Wang, Xijian Zhang, Ernie Hill and Aimin Song, Graphene ballistic nano-rectifier with very high responsivity,Nature Communications.2016, 7:11670.
[2]Kai Qian, Roland Yingjie Tay, Viet Cuong Nguyen, Jiangxin Wang, Guofa Cai, Tupei Chen, Edwin Hang Tong Teo, Pooi See Lee*.“Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications”Adv. Funct. Mater.,2016,26, 2176.
[3]Liu, M.; Hong, S. Q.; Wen, S., Yu, Z.; Vittal, J. J. and Ji, W. Efficient third harmonic generation in a metal–organic framework.Chem. Mater.2016, 28,3385-3390.
[4]Kai Qian, Guofa Cai, Viet Cuong Nguyen, Tupei Chen, Pooi See Lee*. “Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory”,ACS Appl. Mater. Interfaces2016, 8, 27885.
[5] Yilin Wang, Kefeng Wang, Janice Reutt-Robey, Johnpierre Paglione, and Michael S. Fuhrer, “Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes”,Phys. Rev. B93, 121108(R) (2016)
[6]Kai Qian, Viet Cuong Nguyen,Tupei Chen, Pooi See Lee*.“Novel Concepts in Functional Resistive Switching Memories”,J. Mater. Chem. C,2016,4, 9637.
[7]Kai Qian, Viet Cuong Nguyen, Tupei Chen, Pooi See Lee*. “Amorphous-Si-Based Resistive Switching Memories withHighly Reduced Electroforming Voltage and Enlarged Memory Window”Adv. Electron. Mater.2016, 2, 1500370.
[8] Gengchang Zhu, Hanbin Wang, Yiming Wang, Xianjin Feng, Aimin Song, Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation,Applied Physics Letters,2016, 109(11), 113503.
[9] Ming Yang, Zhaojun Li*, Jingtao Zhao, Peng Cui, Chen Fu, Yuanjie Lv, and Zhihong Feng, Effect of Polarization Coulomb field scattering on parasitic source access resistance and extrinsic transconductance in AlGaN/GaN heterostructure FETs.，IEEE Transactions on Electron Devices, Vol.63, 1471 (2016)
[10] Ming Yang, Yuanjie Lv, Zhihong Feng, Wei Lin, Peng Cui, Yan Liu, Chen Fu, and Zhaojun Lin*，Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering，IEEE Transactions on Electron Devices, 63, 3908 (2016).
[11] Jiawei Zhang, Xi Kong, Jia Yang, Yunpeng Li, Joshua Wilson, Jie Liu, Qian Xin, Qingpu Wang, A. M. Song, Analysis of Carrier Transport and Band Tail States in p-type Tin Monoxide Thin-film Transistors by Temperature Dependent Characteristics,Applied Physics Letters.2016, 108(26), 263503
[12] Jiawei Zhang, Hanbin Wang, Joshua Wilson, Xiaochen Ma, Jidong Jin and Aimin Song, Room Temperature Processed Ultra High Frequency Indium Gallium Zinc Oxide Schottky Diode,IEEE Electron Device Letters.2016, 37(4), 389-392.
[13] Y. Zhang*, S. Shi, R. D. Martin, and D. W. Prather, High-gain linearly tapered antipodal slot antenna on LCP substrate at E- and W-bands,IEEE Antennas Wireless Propag. Lett., 2016, 15: 1357-1360.
[14] Tiantian Wei, Gang Chen, Shuai Zhang, Yang Chen, Yuting Hu, Ran Jiang, Yuxiang Li*, “Nonvolatile organic resistive switching memory based on poly(o-methoxyaniline) film”,Microelectron. Eng., 162, 85-88 (2016).
[15] Jiupeng Cao, Yatong Zhu, Xiaoyu Yang, Yang Chen, Yuxiang Li, Hongdi Xiao, Wanguo Hou, Jianqiang Liu, “The promising photo anode of graphene/zinc titanium mixed metal oxides for the CdS quantum dot-sensitized solar cell”,Solar Energy Materials and Solar Cells, 157, 814-819 (2016).
[16] Gregory Auton, Roshan Krishna Kumar, Ernie Hill and Aimin Song, Graphene triangular ballistic rectifier: fabrication and characterization,Journal of Electronic Materials.2016, 46(7), 3942-3948.
[17] Qian Xin; Linlong Yan; Lulu Du; jawei zhang; Yi Luo; Qingpu Wang; Aimin Song, Influence of sputtering conditions on room-temperature fabricated InGaZnO-based Schottky diodes,Thin Solid Films.2016, 616, 569-572
[18] Bin Li, Hongxia Liu, Yasaman Alimi, Aimin Song, Simulation investigation of multiple domain observed in In0.23Ga0.77As planar Gunn diode,International Journal of Hydrogen Energy. 2016, 41(35), 15772-15776.
[19] Leszek Majewski, and Aimin Song, 20 MHz polymer thin-film nanodiodes,Physica Status Solidi. B: Basic Research.2016, 253(8), 1507-1510.
[20] Shahrir R. Kasjoo, Arun K. Singh, Siti S. Mat Isa, Muhammad M. Ramli, Muammar Mohamad Isa, Norhawati Ahmad, Nurul I. Mohd Nor, Nazuhusna Khalid and Ai Min Song, Zero-Bias Microwave Detectors Based on Array of Nanorectifiers Coupled with a Dipole Antenna,Solid-State Electronics.2016, 118, 36-40.
[21] Min Zeng, Xiange Peng, Jianjun Liao, Guizhen Wang, Yanfang Li, Jianbao Li, Yong Qin, Joshua Wilson, Aimin Song and Shiwei Lin, Enhanced photoelectrochemical performance of quantum dot-sensitized TiO2 nanotube arrays with Al2O3 overcoating by atomic layer deposition,Physical Chemistry Chemical Physics.2016, 18(26), 17404-17413.
[22] Ming Yang, Yuanjie Lv, Zhihong Feng, Wei Lin, Peng Cui, Yan Liu, Chen Fu, Zhaojun Lin*,Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostruceure field-effect transistors，Journal of Applied Physics, Vol.119, 224501 (2016).
[23]Chao Liu, Yuefei Cai, Xinbo Zou, and Kei May Lau*, Low-leakage high-breakdown laterally integrated HEMT-LED via n-GaN electrode,IEEE Photonics Technology Letter, 28, 1130, 2016
[24]Chao Liu, Yuefei Cai, Huaxing Jiang, and Kei May Lau*, Optimization of a common buffer platform for monolithic integration of InGaN/GaN light emitting diodes and AlGaN/GaN high electron mobility transistors,Journal of Electronic Materials, 45, 2092, 2016
[25]Xing Lu, Chao Liu, Huaxing Jiang, Xinbo Zou, Anping Zhang, and Kei May Lau, Monolithic Integration of Enhancement-mode Vertical Driving Transistors on a Standard InGaN/GaN Light Emitting Diode Structure,Applied Physics Letters, 109, 053504, 2016
[26]Xing Lu, Chao Liu, Huaxing Jiang, Xinbo Zou, Anping Zhang, and Kei May Lau, Ultralow Reverse Leakage current in AlGaN/GaN lateral schottky barrier diodes grown on bulk GaN substrate,Applied Physics Express, 9, 031001, 2016
