[1] Qinglei Guo, Miao Zhang, Zhongying Xue, Gang Wang, Da Chen, Ronggen Cao, Gaoshan Huang, Yongfeng Mei, Zengfeng Di, Xi Wang, Deterministic Assembly of Flexible Si/Ge Nanoribbons via Edge-Cutting Transfer and Printing for van der Waals Heterojunctions,Small, 2015, 11(33), 4140-4148. (封面文章)

[2] Arun K. Singh, Gregory Auton, Ernie Hill, Aimin Song, Graphene based ballistic rectifiers,Carbon.2015, 84, 124-129.

[3] Yilin Wang, Xinghan Cai, Janice Reutt-Robey, and Michael S. Fuhrer, “Neutral-current Hall effects in disordered graphene”,Phys. Rev. B92, 161411(R) (2015)

[4] X. X. Xu, H. B. Lv, Y. X. Li, H. T. Liu, M. Wang, Q. Liu, S. B. Long, M. Liu, “Degradation of Gate Voltage Controlled Multilevel Storage in One Transistor One Resistor Electrochemical Metallization Cell”,IEEE Electron Device Letters, 36, 555-557 (2015).

[5] Qian Xin, Linlong Yan, Yi Luo, and Aimin Song. Study of Breakdown Voltage of Indium-Gallium-Zinc-Oxide-Based Schottky Diode.Applied Physics Letters. 2015,106(11), 113506.

[6] Binglei Zhang, He Li, Xijian Zhang, Yi Luo, Qingpu Wang, and Aimin Song. Performance regeneration of InGaZnO transistors with ultra-thin channels.Applied Physics Letters.2015; 106(9), 093506

[7] A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors Jingtao Zhao, Zhaojun Lin*, Quanyou Chen, Ming Yang, Peng Cui, Yuanjie Lv, and Zhihong Feng,Applied Physics Letters, Vol. 107, 113502 (2015)

[8] Jiawei Zhang, Linqing Zhang, Xiaochen Ma, Joshua Wilson, Jidong Jin, Lulu Du, Qian Xin, and Aimin Song, Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes,Applied Physics Letters2015, 107(9), 093505.

[9] Qinglei Guo, Miao Zhang, Zhongying Xue, Jing Zhang, Gang Wang, Da Chen, Zhiqiang Mu, Gaoshan Huang, Yongfeng Mei, Zengfeng Di, Xi Wang, Uniaxial and tensile strained germanium nanomembranes in rolled-up geometry by polarized Raman scattering spectroscopy,AIP Advances, 2015, 5(3), 037115.

[4] Yilin Wang, Shudong Xiao, Xinghan Cai, Wenzhong Bao, Janice Reutt-Robey and Michael S. Fuhrer, “Electronic transport properties of Ir-decorated graphene”,Scientific Reports5, 15764 (2015)

[10] Shahrir R. Kasjoo, Arun K. Singh, and Aimin M. Song, RF characterization of unipolar nanorectifiers at zero bias,Physica Status Solidi. A:Applications and Materials Science.2015, 212(9), 2091-2097.

[11] Jingtao Zhao, Zhaojun Lin(*), Chongbiao Luan, Quanyou Chen, Ming Yang ,Yang Zhou, Yuanjie Lv, Zhihong Feng, A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors,Superlattices and Microstructures, 79: 21-28.(2015)

[12] Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes, Zhao, J., Lin, Z., Chen, Q., Yang, M., Cui, P., Lv, Y. and Feng, Z.,Applied Physics A, 121(3):1271-1276. ( 2015)

[13] Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors, Yang, M., Lin, Z., Zhao, J., Wang, Y., Li, Z., Lv, Y. and Feng, Z.,Superlattices and Microstructures, 85:43-49. ( 2015)

[14] Chao Liu, Yuefei Cai, Zhaojun Liu, Jun Ma, and Kei May Lau*, Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors,Applied Physics Letters, 106, 181110, 2015.

[15] Chao Liu, Zhaojun Liu, Tongde Huang, Jun Ma, and Kei May Lau*, Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping,Journal of Crystal Growth, 414, 243, 2015.