[1] Mingwei Zhu, Yilin Wang, Shuze Zhu, Lisha Xu, Chao Jia, Jiaqi Dai, Jianwei Song, Yonggang Yao, Yanbin Wang, Yongfeng Li, Doug Henderson, Wei Luo, Heng Li, Marilyn L. Minus, Teng Li, Liangbing Hu, “Anisotropic, Transparent Films with Aligned Cellulose Nanofibers”,Adv. Mater.29, 1606284 (2017)

[2] Gregory Auton, Dmytro B. But, Jiawei Zhang, Ernie Hill, Dominique Coquillat, Christophe Consejo, Philippe Nouvel, Wojciech Knap, Luca Varani, Frederic Teppe, Jeremie Torres, and Aimin Song, Terahertz Detection and Imaging Using Graphene Ballistic Rectifiers,Nano Letters.2017, 17(11), 7015-7020 (2017).

[3]Kai Qian, Roland Yingjie Tay, Jingwei Chen, Huakai Li, Jinjun Lin, Jiangxin Wang, Guofa Cai, Viet Cuong Nguyen, Edwin Hang Tong Teo, Tupei Chen, Pooi See Lee*. “Direct Observation of Indium Conductive Filaments in Transparent Flexible, and Transferable Resistive Switching Memory”,ACS Nano,2017,11, 1712.

[4] Zai-xing Yang, Lizhe Liu, SenPo Yip, Dapan Li, Lifan Shen, Ziyao Zhou, Ning Han, Tak Fu Hung, Edwin Yue-Bun Pun, Xinglong Wu, Aimin Song, and Johnny C. Ho, Complementary Metal Oxide Semiconductor-Compatible, High-Mobility,⟨111⟩-Oriented GaSb Nanowires Enabled by Vapor–Solid–Solid Chemical Vapor Deposition, ACS Nano.2017, 11(4), 4237-4246.

[5] Yanan Chen#, Yilin Wang# (co-first), shuze Zhu, Kun Fu, Xiaogang Han, Yanbin Wang, Bin Zhao, Tian Li, Boyang Liu, Yiju Li, Jiaqi Dai, Teng Li, Hua Xie, John Connell, Yi Lin, Liangbing Hu, “Nanomanufacutring of Graphene Nanosheets through Nano-Hole Opening and Closing”,Mater. Today(2019)

[6] Wensi Cai, Xiaochen Ma, Jiawei Zhang, and Aimin Song, Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer,Materials.2017, 10(4), 429.

[7] Liu, M.; Quah, H. S.; Wen, S;Wang, J; P. Kumar,P; Eda, G; Vittal, J.J and Ji, W. Simultaneous generation of second and third harmonics from single crystals of a one-dimensional coordination polymer.J. Mater. Chem C, 2017, 5, 2936-2941.

[8] Jiawei Zhang, Jia Yang, Yunpeng Li, Joshua Wilson, Xiaochen Ma, Qian Xin, and Aimin Song, High Performance Complementary Circuits Based on p SnO and n IGZO Thin-Film Transistors,Materials.2017, 10(3), 319.

[9] Lulu Du, He Li, Linlong Yan, Jiawei Zhang, Qian Xin, Qingpu Wang, and Aimin Song, Effects of substrate and anode metal annealing on InGaZnO Schottky diodes,Applied Physics Letters,2017, 110(1), 011602.

[10] P. Cui, H. Liu, W. Lin, Z. Lin*, A. Cheng, M. Yang, Y. Liu, C. Fu, Y. Lv, and C. Luan, Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs,IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 1038-1044, Mar.（2017）.

[11] Da Chen, Nan Zhang, Bei Wang, Anli Xu, Ya Li, Siwei Yang, Gang Wang, Qinglei Guo*, Controllable cracking behavior in Si/Si0.70Ge0.30/Si heterostructure by tuning the H+ implantation energy,Applied Physics Letters, 2017, 111(6), 062104.

[12] Qinglei Guo, Gang Wang, Da Chen, Gongjin Li, Gaoshan Huang, Miao Zhang, Xi Wang, Yongfeng Mei, Zengfeng Di, Exceptional transport property in a rolled-up germanium tube,Applied Physics Letters, 2017, 110(11), 112104.

[13] Wensi Cai, Jiawei Zhang , Joshua Wilson, Xiaochen Ma, Hanbin Wang, Xijian Zhang, Qian Xin, and Aimin Song, Oxide-Based Electric-Double-Layer Thin-Film Transistors on a Flexible Substrate,IEEE Electron Device Letters., 2017, 38(12), 1680-1683.

[14] Joshua Wilson, Jiawei Zhang, Yunpeng Li, Yiming Wang, Qian Xin, and Aimin Song, Influence of interface inhomogeneities in thin-film Schottky diodes,Applied Physics Letters.2017, 111(21), 213503.

[15] Letao Yang, Hanbin Wang, Xijian Zhang, Yuxiang Li, Xiufang Chen, Xiangang Xu, Xian Zhao and Aimin Song, Thermally evaporated SiO serving as gate dielectric in graphene field-effect transistors,IEEE Transactions on Electron Devices.2017, 64(4), 1846-1850.

[16] Qinglei Guo, Yangfu Fang, Miao Zhang, Gaoshan Huang, Paul K. Chu, Yongfeng Mei, Zengfeng Di, Xi Wang, Wrinkled Single-Crystalline Germanium Nanomembranes for Stretchable Photodetectors,IEEE Transactions on Electron Devices, 2017, 64(5), 1985-1990.

[17] P. Cui, Y. Lv, Z. Lin*, C. Fu, and Y. Liu, Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors,Journal of Applied Physics, Vol. 122, no. 12, pp. 124508-1—124508-（2017）.

[18] Gongjin Li#, Qinglei Guo#, Yangfu Fang, Shiwei Tang, Minjie Liu, Gaoshan Huang, Yongfeng Mei, Self-Assembled Dielectric Microsphere as Light Concentrators for Ultrathin-Silicon Based Photodetectors with Broadband Enhancement,Phys. Status Solidi A, 2017, 214(10), 1700295.

[19] Da Chen, Dadi Wang, Yongwei Chang, Ya Li, Rui Ding, Jiurong Li, Xiao Chen, Gang Wang, Qinglei Guo*, Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures,Applied Physics Express, 2017, 11(1), 011301.

[20]Y. Zhang*, S. Shi, R. D. Martin, P. Yao, F. Wang, and D. W. Prather, Ultra-wideband vialess microstrip line-to stripline transition in multilayer LCP substrate for E- and W-band applications,IEEE Microw. Wireless Compon. Lett., 2017, 27 (12): 1101-1103.

[21]Y. Zhang*, S. Shi, R. D. Martin, and D. W. Prather, Broadband SIW-to-waveguide transition in multilayer LCP substrates at W-band,IEEE Microw. Wireless Compon. Lett., 2017, 27 (3): 224-226.

[22]Y. Zhang*, S. Shi, R. D. Martin, and D. W. Prather, Slot-coupled directional filters in multilayer LCP substrates at 95 GHz,IEEE Trans. Microwave Theory Techn., 2017, 65 (2): 476-483.

[23] Hanbin Wang, Yiming Wang, Gengchang Zhu, Qingpu Wang, Qian Xin, Lin Han, and Aimin Song, A Novel Thermally Evaporated Etching Mask for Low-Damage Dry Etching,IEEE Transactions on Nanotechnology.2017, 16(2), 290-295.

[24] C. Fu, Z. Lin*, Y. Liu, P. Cui, Y. Lv, Y. Zhou, G. Dai, and C. Luan, Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors，Superlattices and Microstructures, 2017, 111, 806-815.

[25] P. Cui, Z. Lin*, C. Fu, Y. Liu, and Y. Lv, A method to determine electron mobility of the two dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors,Superlattices and Microstructures, Vol. 110, pp. 289-295, Aug. (2017). (selected as research highlights in Advances in Engineering)

[26]Huaxing Jiang, Chao Liu, Xing Lu, Yuying Chen, Chak Wah Tang, and Kei May Lau, Investigation of In-situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs,IEEE Transactions on Electron Devices, 64, 832, 2017

[27] Jie Ren, Chao Liu, C W Tang, Kei May Lau, and J. K.O. Sin, A Novel Si-GaN Monolithic Integration Technology for a High-Voltage Cascoded Diode,IEEE Electron Device Letters, 38, 501, 2017

[28] Xing Lu, Chao Liu, Huaxing Jiang, Xinbo Zou, and Kei May Lau, High Performance Monolithically Integrated GaN Drivi