[1] Chao Jia, Chaoji Chen, Yudi Kuang, Kun Fu, Yilin Wang, Yonggang Yao, Spencer Kronthal, Emily Hitz, Jianwei Song, Fujun Xu, Boyang Liu, Liangbing Hu, “From Wood to Textiles: Top‐Down Assembly of Aligned Cellulose Nanofibers”,Adv. Mater., 2018, 30, 1801347.
[2] Jonathan M. Larson, Eleanor Gillette, Kristen Burson, Yilin Wang, Sang Bok Lee and Janice E. Reutt-Robey, “Pascalammetry with operando microbattery probes: Sensing high stress in solid-state batteries”,Sci. Adv., 2018, 4, eaas8927.
[3] Wei Luo, John Hayden, Soo-Hwan Jang, Yilin Wang, Ying Zhang, Yudi Kuang, Yanbin Wang, Yubing Zhou, Gary W. Rubloff, Chuan-Fu Lin, Liangbing Hu, “Highly Conductive, Light Weight, Robust, Corrosion-Resistant, Scalable, All-Fiber Based Current Collectors for Aqueous Acidic Batteries”,Adv. Energy Mater. 7, 1702615 (2018)
[4] Arun Kumar Singh, Gregory Auton, Ernest Hill, Aimin Song, Estimation of intrinsic and extrinsic capacitances of graphene self-switching diode using conformal mapping technique, 2D Materials. 2018, 5(3), 035023.
[5]Arun Kumar Singh, Gregory Auton, Ernest Hill, Aimin Song,Estimation of intrinsic and extrinsic capacitances of graphene self-switching diode using conformal mapping technique,2D Materials 2018, 5,(3)
[6] Yilin Wang, Yanan Chen, Steven D. Lacey, Lisha Xu, Hua Xie, Tian Li, Valencia A. Danner, and Liangbing Hu, “Reduced Graphene Oxide Film with Record-High Conductivity and Mobility”,Mater. Today 21, 186 (2018)
[7] Yilin Wang, Lisha Xu, Zhi Yang, Hua Xie, Puqing Jiang, Jiaqi Dai, Wei Luo, Yonggang Yao, Emily Hitz, Ronggui Yang, Bao Yang, Liangbing Hu, “High Temperature Thermal Management with Boron Nitride Nanosheets”,Nanoscale 10, 167 (2018)
[8] Qinglei Guo, Zengfeng Di, Max G. Lagally, Yongfeng Mei, Strain Engineering and Mechanical Assembly of Silicon/Germanium Nanomembranes,Materials Science & Engineering - R: Reports, 2018, 128, 1-31. (封面文章)
[9] Ruobing Pan#, Qinglei Guo#,*, Gongjin Li, Enming Song, Gaoshan Huang, Zhenghua An, Zengfeng Di, Yongfeng Mei, Schottky Barrier Modulation in Surface Nanoroughened Silicon Nanomembranes for High-Performance Optoelectronics, ACS applied materials & interfaces, 2018, 10(48): 41497-41503.
[10] Yi Chen#, Qinglei Guo#, Gaoshan Huang, Gongjin Li, Lu Wang, Ziao Tian, Yuzhou Qin, Zengfeng Di, Yongfeng Mei, Multifunctional nanocracks in silicon nanomembranes by notch-assisted transfer printing,ACS applied materials & interfaces, 2018, 10(30), 25644-25651.
[11] Gang Wang#, Qinglei Guo#, Da Chen#, Zhiduo Liu, Xiaohu Zheng, Anli Xu, Siwei Yang, Guqiao Ding, Facile and Highly Effective Synthesis of Controllable Lattice Sulfur-Doped Graphene Quantum Dots via Hydrothermal Treatment of Durian,ACS applied materials & interfaces, 2018, 10(6), 5750-5759.
[12] Jiurong Li#, Qinglei Guo#, Nan Zhang, Siwei Yang, Zhiduo Liu, Anli Xu, Weidong Tao, Gang Wang, Da Chen, Guqiao Ding, Direct integration of polycrystalline graphene on silicon as a photodetector via plasma-assisted chemical vapor deposition, Journal of Materials Chemistry C, 2018, 6(36), 9682-9690.
[13]Mingming Han, Jiamin Sun, Luozhen Bian, Zhou Wang, Lei Zhang, Yanxue Yin, Zhaofeng Gao, Fulin Li, Qian Xin, Longbing He, Ning Han, Aimin Song and Zaixing Yang,Two-Step Vapor Deposition of Self-Catalyzed Large-Size PbI2 Nanobelts for High-Performance Photodetector,Journal of Materials Chemistry C, 2018 ,6(21),5746-5753
[14] Anli Xu, Siwei Yang, Zhiduo Liu, Gongjin Li, Jiurong Li, Ya Li, Da Chen, Qinglei Guo*, Gang Wang, Guqiao Ding, Near-infrared photodetector based on Schottky junctions of monolayer graphene/GeOI,Materials Letters, 2018, 227, 17-20.
[15] Yaxuan Liu ; Lulu Du; Guangda Liang; Wenxiang Mu; Zhitai Jia; ; Qian Xin ; Xutang Tao; Mingsheng Xu; Aimin Song, Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio,IEEE ELECTRON DEVICE LETTERS, 2018.10.23, 39(11)：1696~1699
[15]L. Zhang, H. Zhou, J. Zhang, Q. Wang, Y. Zhang*, and A. Song*, Unipolar nano-diode detector with improved performance using high-k material SiNx,Semicond. Sci. Technol., 2018, 33, 114016.
[16] Mingwei Zhu#, Chao Jia#, Yilin Wang# (co-first), Zhiqiang Fang, Jiaqi Dai, Lisha Xu, Dafang Huang, Jiayang Wu, Yongfeng Li, Jianwei Song, Yonggang Yao, Emily Hitz, Yanbin Wang, Liangbing Hu, “Isotropic Paper Directly from Anisotropic Wood: Top-down Green Transparent Substrate Toward Biodegradable Electronics”,ACS Appl. Mater. Interfaces, 10 (34), pp 28566–28571 (2018)
[17]Xiaohui Liu, Meng Xu, Xijian Zhang, Weiguang Wang, Xianjin Feng, Aimin Song, Pulsed-laser-deposited,single-crystalline Cu2O films with low resistivity achieved through manipulating the oxygen pressure.Applied Surface Science ,2018,435,305-311
[18] Pengfei Ma, Jiamin Sun, Guangda Liang, Yunpeng Li, Qian Xin, Yuxiang Li, Aimin Song,Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric, Applied Physics Letters 2018, 113(6)
[19]Yunpeng Li, Jia Yang, Yunxiu Qu, Jiawei Zhang, Li Zhou, Zaixing Yang, Zhaojun Lin, Qingpu Wang, Aimin Song, and Qian Xin,Ambipolar SnOx Thin-Film Transistors Achieved at High Sputtering Power,Applied Physics Letters ,2018,112(18)
[20] Pengfei Ma, Lulu Du, Yiming Wang, Ran Jiang, Qian Xin, Yuxiang Li, andAimin Song, Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric,Applied Physics Letters, 2018,112(2)
[21] Pengfei Ma, Jiamin Sun, Guangda Liang, Yunpeng Li, Qian Xin, Yuxiang Li*, and Aimin Song*, “Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric”,Appl. Phys. Lett., 113, 063501 (2018).
[22] Pengfei Ma, Lulu Du, Yiming Wang, Ran Jiang, Qian Xin, Yuxiang Li*, Aimin Song*, "Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric",Appl. Phys. Lett., 112, 023501 (2018).
[23] Liu, M.; Hong, S. Q.; Wen, S.; Li, Y.; Vittal, J. J. and Ji, W. Multiphoton absorption and two-photon-pumped random lasing in crystallites of a coordination polymer.J. Phys. Chem. C2018, 122, 777-781.
[24] Yuzhuo Yuan, Jin Yang, Zhenjia Hu, Yunpeng Li, Lulu Du, Yiming Wang, Li Zhou, Qingpu Wang, Aimin Song, Qian Xin, Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption, IEEE Electron Device Letters. 2018, 39(11), 1676-1679.
[25] Jin Yang, Yuzhuo Yuan, Yunpeng Li, Lulu Du, Yiming Wang, Zhenjia Hu, Qingpu Wang, Li Zhou, Qian Xin, and Aimin Song, All-oxide-semiconductor-based Thin-film Complementary Static Random Access Memory, IEEE Electron Device Letters. 2018, 39(12), 1876-1879.
[26] Lulu Du, Dandan He, Yaxuan Liu, Mingsheng Xu, Qingpu Wang, Qian Xin, Aimin Song, Low-Voltage, Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte, IEEE Electron Device Letters. 2018, 39(9), 1334-1337.
[27] Lulu Du, Jiawei Zhang, Yunpeng Li, Mingsheng Xu, Qingpu Wang, Aimin Song, Qian Xin, High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO, IEEE Transactions on Electron Devices. 2018, 65(10), 4326-4333.
[28] Gengchang Zhu, Yiming Wang, Qian Xin, Mingsheng Xu, Xiufang Chen, Xiangang Xu, Xianjin Feng, Aimin Song, GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric, Semiconductor Science and Technology. 2018, 33(9), 095023.
[29] Yunpeng Li, Jia Yang, Yunxiu Qu, Jiawei Zhang, Li Zhou, Zaixing Yang, Zhaojun Lin, Qingpu Wang, Aimin Song, and Qian Xin, Ambipolar SnOx Thin-Film Transistors Achieved at High Sputtering Power, Applied Physics Letters.2018, 112(18), 182102.
[30] Luozhen Bian, Wei Gao, Jiamin Sun, Mingming Han, Fulin Li, Zhaofeng Gao, Lei Shu, Ning Han, Zai-xing Yang, Aimin Song, Yongquan Qu, and Johnny C. Ho, Phosphorus-Doped MoS2 Nanosheets Supported on Carbon Cloths as Efficient Hydrogen-Generation Electrocatalysts, ChemCatChem. 2018, 10(7), 1571-1577.
[31] Jin Yang, Yiming Wang, Yunpeng Li, Yuzhuo Yuan, Zhenjia Hu, Pengfei Ma, Li Zhou, Qingpu Wang, Aimin Song, and Qian Xin, Highly Optimised Complementary Inverters Based on p-SnO and n-InGaZnO with High Uniformity, IEEE Electron Device Letters. 2018, 39(4), 516-519.
[32] Yiming Wang, Hanbin Wang, Jiawei Zhang, He Li, Gengchang Zhu, Yanpeng Shi, Yuxiang Li, Qingpu Wang, Qian Xin, Zhongchao Fan, Fuhua Yang, and Aimin Song, Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions, IEEE Transactions on Electron Devices. 2018, 65(4), 1377-1382.
[33] Xiaohui Liu, Meng Xu, Xijian Zhang, Weiguang Wang, Xianjin Feng, Aimin Song, Pulsed-laser-deposited, single-crystalline Cu2O films with low resistivity achieved through manipulating the oxygen pressure, Applied Surface Science, 2018, 435, 305-311.
[34] Wensi Cai, Seonghyun Park, Jiawei Zhang, Joshua Wilson, Yunpeng Li , Qian Xin, Leszek Majewski, and Aimin Song, One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed AlxOy Gate Dielectric, IEEE Electron Device Letters. 2018, 39(3), 375-378.
[35] Yunpeng Li, Jin Yang, Yiming Wang, Pengfei Ma, Yvzhuo Yuan, Jiawei Zhang, Zhaojun Lin, Li Zhou, Qian Xin, and Aimin Song, Complementary Integrated Circuits Based on p-type SnO and n-type IGZO Thin-Film Transistors, IEEE Electron Device Letters. 2018, 39(2), 208-211.
[36] Jidong Jin, Jiawei Zhang, Andrew Shaw, Valeriya Kudina, Ivona Mitrovic, Jacqueline Wrench, Paul Chalker, Claudio Balocco, Aimin Song, Steve Hall, A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density, Journal of Physics D: Applied Physics. 2018, 51(6), 065102.
[37] Mingming Han, Jiamin Sun, Luozhen Bian, Zhou Wang, Lei Zhang, Yanxue Yin, Zhaofeng Gao, Fulin Li, Qian Xin, Longbing He, Ning Han, Aimin Song and Zaixing Yang, Two-Step Vapor Deposition of Self-Catalyzed Large-Size PbI2 Nanobelts for High-Performance Photodetectors, Journal of Materials Chemistry C. 2018, 6(21), 5746-5753.
[38] M. Yang, Y. Lv, P. Cui, Y. Liu, C. Fu, and Z. Lin*, Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors,Journal of Physics and Chemistry of Solids vol.123, pp.223-227, Aug.(2018).
[39] P. Cui, Z. Lin*, C. Fu, Y. Liu, and Y. Lv, Effect of gate–source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors,Applied Physics A，vol.124, no.5, pp. 359, May. (2018).
[40]Luozhen Bian, Wei Gao, Jiamin Sun, Mingming Han, Fulin Li, Zhaofeng Gao, Lei Shu, Ning Han, Zai-xing Yang, Aimin Song, Yongquan Qu, and Johnny C. Ho,Phosphorus-Doped MoS2 Nanosheets Supported on Carbon Cloths as Efficient Hydrogen-Generation Electrocatalyst ,ChemCatChem, 2018,10(7),1571-1577
[41] Yaxuan Liu, Lulu Du, Guangda Liang, Wenxiang Mu, Zhitai Jia, Mingsheng Xu, Qian Xin, Xutang Tao, Aimin Song,Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio,IEEE Electron Device Letters ,2018,39(11)1696-1699
[42] Yuzhuo Yuan, Jin Yang, Zhenjia Hu, Yunpeng Li, Lulu Du, Yiming Wang, Li Zhou, Qingpu Wang, Aimin Song, Qian Xin,Oxide-Based Complementary Inverters With High Gain and NanoWatt Power ConsumptionIEEE Electron Device Letters ,2018,39(11),1676-1679
[43] Jin, Yang; Yuan, Yuzhuo ; Yunpeng Li; Du, Lulu; Wang, Yiming ; Hu, Zhenjia ;Qingpu Wang; Zhou, Li; Qian Xin, ; Song, Aimin. All-oxide-semiconductor-based Thin-film Complementary Static Random Access Memory,IEEE Electron Device Letters,2018,39(12)1876-1879
[44] Du, Lulu; He, Dandan; Liu, Yaxuan; Xu, Mingsheng; Wang, Qingpu; Xin, Qian; Song, Aimin,Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte,IEEE Electron Device Letters ,2018,39(9)1334-1337
[45]Yunpeng Li, Jin Yang, Yiming Wang, Pengfei Ma, Yvzhuo Yuan, Jiawei Zhang, Zhaojun Lin, Li Zhou, Qian Xin, and Aimin Song,Complementary Integrated Circuits Based on p-type SnO and n-type IGZO Thin-Film Transistors, IEEE Electron Device Letters ,2018,39(2 )208-211
[46] Wensi Cai, Seonghyun Park, Jiawei Zhang, Joshua Wilson, Yunpeng Li , Qian Xin, Leszek Majewski, and Aimin Song,One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed AlxOy Gate Dielectric ,IEEE Electron Device Letters2018,39(3)375-378
[47] Jin Yang, Yiming Wang, Yunpeng Li, Yuzhuo Yuan, Zhenjia Hu, Pengfei Ma, Li Zhou, Qingpu Wang, Aimin Song, and Qian Xin,Highly Optimised Complementary Inverters Based on p-SnO and n-InGaZnO with High Uniformity,IEEE Electron Device Letters ,2018,39(4)516-519
[48] Du, Lulu; Zhang, Jiawei; Li, Yunpeng; Xu, Mingsheng; Wang, Qingpu; Song, Aimin; Xin, Qian. High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO, IEEE Transactions on Electron Devices, 2018 5(10)4326-4333
[49] Yiming Wang, Hanbin Wang, Jiawei Zhang, He Li, Gengchang Zhu, Yanpeng Shi, Yuxiang Li, Qingpu Wang, Qian Xin, Zhongchao Fan, Fuhua Yang, and Aimin Song,Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions, IEEE Transactions on Electron Devices ,2018,65(4)1377-1382
[50]Jidong Jin, Jiawei Zhang, Andrew Shaw, Valeriya Kudina, Ivona Mitrovic, Jacqueline Wrench, Paul Chalker, Claudio Balocco, Aimin Song, Steve Hall,A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density, Journal of Physics D: Applied Physics ,2018,51(6).
[51] Chao Liu, Riyaz A Khadar, and Elison Matioli, Vertical GaN-on-Si MOSFETs with Monolithically Integrated Freewheeling Schottky Barrier Diodes,IEEE Electron Device Letters, 39, 1034, 2018
[52] Chao Liu, Riyaz Abdul Khadar, and Elison Matioli, GaN-on-Silicon Vertical Power MOSFETs,IEEE Electron Device Letters, 39, 71, 2018
[53] Chao Liu, Yuefei Cai, Huaxing Jiang, and Kei May Lau, Monolithic integration of a voltage-controlled light emitter with dual-wavelength photodiodes for wireless visible light communication,Optics Letters, 14, 3401, 2018
[54] Chao Liu, Riyaz Abdul Khadar, and Elison Matioli, 645 V Quasi-vertical GaN Power Transistors on Silicon Substrates,30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17, 2018
[55] R A Khadar, Chao Liu, Liyang Zhang, Peng Xiang, Kai Cheng and Elison Matioli, 820 V GaN-on-Si Quasi-Vertical PiN Diodes with BFOM of 2.0 GW/cm2,IEEE Electron Device Letters, 39, 401, 2018
[56] Huaxing Jiang, Chao Liu, Kar Wei Ng, Chak Wah Tang, and Kei May Lau*, High Performance AlGaN/GaN/Si Power MOSHEMTs with ZrO2 Gate Dielectric,IEEE Transactions on Electron Devices, 12, 5337, 2018
[57] Yuefei Cai, Xinbo Zou, Chao Liu, and Kei May Lau, Voltage-controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters,IEEE Electron Device Letters, 39, 224, 2018
