[1]“一种平面耿氏二极管及其制备方法”，授权专利号ZL201510776711.2，发明专利，发明人：宋爱民，王汉斌，王卿璞。

[2] A method to improve the electrical performance of thin film transistors, Xijian Zhang, Binglei Zhang, Chinese Patent application No. 201510096582.2

[3] A planar Gunn device and lithography method, Aimin Song, Hanbin Wang, Qingpu Wang, Chinese Patent application No. 2015107767112.

[4] A method to reduce the heat load thermal evaporation of metals, Chinese Patent application No. 2015107767112.

[5] A thermal evaporator design to reduce heat damage to substrate, Chinese Patent application No. 201511025642.8.