Dr. Peter Poechmueller 濮必得博士

Jinan, Shandong, 250101, P.R.CHINA

email:peter.poechmueller@oulongconsulting.com

Born: Jan. 9, 1965 in Ulm/Germany

Education:

Received M.S. in 1989, and PhD in 1993, both in Microelectronics from

Technical University Darmstadt in Germany

Profile:

Languages: German, English, Mandarin, French (reading)

Technical: Semiconductor Design, Test, Assembly and Technology Manufacturing

Others: Received highest friendship medal from Prime Minister of China（获李克强总理接见）for semiconductor contributions (2013).

Experience:

Ample experience in management of R&D and factories from small to major organizations. 30 years of relevant working experience in Asia (11yrs), USA (8yrs) and Europe (9yrs).

(1)Since Oct 2018,Shandong University

-Professor at School of Microelectronics, build up of Memory laboratory

(2)2014-2018,Intelligent Memories, Hong Kong

-Senior advisor and later CTO

-Responsible for DRAM product portfolio development

(3)2009-2014,Shandong SinoChip Semiconductor Co. Ltd

- CTO and SVP, Jinan, Shandong,

- Responsible for setup of Backend Factory and restructure Xian Design Center

(4)2006-2009,Qimonda Xian, PR. China

- Vice President China R&D

- General Manager Development Center Xian and China development activities

(5)2005-2006,Qimonda, Dresden, Germany

- Vice President Dresden, plant manager assembly & test plant Dresden

(6)2003-2004,Infineon, Munich, Germany

- Vice President memory product development & test

- Responsible for 3 development centers in USA and Germany

(7)2001 – 2002,Infineon, VT, USA

- Senior Director, head of DRAM development alliance with IBM

(8)1998 – 2001,Infineon, Munich, Germany

- Senior Director memory product engineering & test

- responsible for all Infineon memory product engineering & test development

(9)1997 – 1998,Siemens, NY, USA

- department head DRAM development alliance with IBM & Toshiba

- additionally lead designer 1G SDRAM in 175nm

(10) 1996 – 1997,Siemens, VT, USA

- lead designer DRAM development alliance with IBM & Toshiba

(11)1994 – 1996,Siemens, NY, USA

- design engineer DRAM development alliance with IBM & Toshiba

(12)1994,Siemens, Munich, Germany

- memory product engineer 4M DRAM

(13)1989 – 1994,Darmstadt University of Technology, Germany

- employment as researcher at microelectronics institute, PhD