Qing-Tai Zhaoreceived his M.S degree in Physics from Shandong University, China in 1990, and Ph.D degree in physics from Peking University, Beijing, China in 1993. Then he joined the Institute of Microelectronics, Peking University, as a Lecturer and an associate professor, where he worked on SOI materials and devices. In May 1997, he was awarded as a Humboldt Research Fellow and started his research in Peter Grünberg Institute 9 (PGI 9), Research Center Juelich (Forschungszentrum Juelich), Germany, where he is currently a senior research scientist and the leader of Group-IV device group. His primary research focuses on Si/Ge based devices and technology, ultra-thin silicide and Schottky barrier engineering, FDSOI and nanowire devices, steep slope transistors with tunnel-FETs and negative capacitance MOSFETs. He has authored and co-authored about 260 scientific papers published in international journals and conferences. He holds 11 international patents and more than 15 Chinese patents.

The supervised students won the ULIS conference best paper prize for the year of 2010, 2011 and 2014. He is one of the winners of  the IEEE EDS George E. Smith Award for the best paper published in 2017 IEEE Electron Device Letter.