[1] Xuejian Du, Weiguang Wang, Mingxian Wang, Xianjin Feng, and Jin Ma, Effect of Sn content on the structural and photoelectric properties of IATO films,Journal of Material Science, 2017, 52,367–374.
[2] Weiguang Wang, Wei Zhao, Xianjin Feng, Linan He, Qiong Cao, Jin Ma, Structural, electrical and optical properties of In doped brookite TiO2thin films deposited on YSZ (110) substrates by MOCVD,Journal of Alloys and Compounds, 2017, 708, 1195-1200.
[3] Haiyan Lv, Changfu Li,JianfeiLi,MingshengXu,ZiwuJi, Kaiju Shi, Xinglian Xu, Hongbin Li, and XiangangXu, Combined effect of the indium content and well width on electroluminescence in InGaN/GaN multiple quantum well-based LEDs,Materials Express, 2017, 7, 523-528.
[4]ChangfuLi,ZiwuJi, Jianfei Li, Mingsheng Xu, Hongdi Xiao, and Xiangang Xu, Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths,Scientific Reports, 2017,7, 15301.
[5]Jianfei Li, ChangfuLi, Mingsheng Xu,ZiwuJi, KaijuShi, XinglianXu, HongbinLi, Xiangang Xu, “W-shaped” injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate,Optics Express, 2017,25, A871-A879.
[6]Jianfei Li, Yuanjie Lv, ChangfuLi,ZiwuJi, Zhiyong Pang, Xiangang Xu, Mingsheng Xu, Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs,Chinese Physics B, 2017,26, 098504.
[7]Qiang Wang,ZiwuJi, Yufan Zhou, Xuelin Wang, Baoli Liu, Xiangang Xu, Xingguo Gao, Jiancai Leng, Diameter-dependent photoluminescence properties of strong phase-separated dual-wavelength InGaN/GaN nanopillar LEDs,Applied Surface Science, 2017,410, 196–200.
[8]Jianfei Li, Yuanjie Lv, Shulai Huang,ZiwuJi, Zhiyong Pang, Xiangang Xu, Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties,Optoelectronics and Advanced Materials-Rapid Communications, 2017,11, 184-188.
[9]Xiaohui Liu, Meng Xu, Jin Ma, Xijian Zhang, Caina Luan, Xianjin Feng, Aimin Song,Cu2O epitaxial films with domain structures prepared on Y-stabilized ZrO2substrates by pulsed laser deposition,Ceramics International,2017,43(17),15500-15504.
[10]Dezhong Cao,Hongdi Xiao, Qingxue Gao, Xiaokun Yang, Caina Luan, Jianqiang Liu, Xiangdong Liu, Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers,Nanoscale, 2017, 9, 11504-11510.
[11] Qingxue Gao,Hongdi Xiao, Dezhong Cao, Xiaokun Yang, Jianqiang Liu, Hongzhi Mao, Jin Ma, Fabrication and properties of self-standing GaN-based film with a strong phase-separated InGaN/GaN layer in neutral electrolyte,Journal of Alloys and Compounds, 2017, 722, 767-771.
[12] Dezhong Cao,Hongdi Xiao, Jiacheng Fang, Jianqiang Liu, Qingxue Gao, Xiangdong Liu, Jin Ma, Photoelectrochemical water splitting on nanoporous GaN thin films for energy conversion under visible light,Materials Research Express,2017, 4, 015019.
[13] Jishi Cui, Dezhong Cao, Qingxue Gao, Xiaokun Yang, Jianqiang Liu, Jin Ma,Hongdi Xiao, Porosity-induced weakening of piezoresponse in GaN layers by means of piezoelectric force microscopy,Materials Letters, 2017, 208, 31-34.
[14] Dezhong Cao, Rong Liu,Hongdi Xiao, Qingxue Gao, Xiaokun Yang, Jianqiang Liu, Xiangdong Liu, Photoluminescence properties of etched GaN-based LEDs via UV-assisted electrochemical etching,Materials Letters, 2017, 209, 555-557.
[15]Zhiyong Pang, Dali Sun, Chuang Zhang, Sangita Baniya, Ohyun Kwon, and Zeev Valy Vardeny,Manipulation of Emission Colors Based on Intrinsic and Extrinsic Magneto-Electroluminescence from Exciplex Organic Light-Emitting Diodes,ACS Photonics,2017, 4,1899-1905.
[16]Lin Wei, Xiaoming Zhang, Xiaobiao Liu, Hongcai Zhou, Bo Yang and Mingwen Zhao,Tunable Dirac cones in two-dimensional covalent organic materials: C2N6S3and its analogs,RSC Advances, 2017, 7, 52065–52070.
[17]Fengyun Wang, SenPo Yip, Guofa Dong, Fei Xiu, Longfei Song, Zaixing Yang, Dapan Li, Tak Fu Hung, Ning Han, Johnny C Ho,Manipulating III–V Nanowire Transistor Performance via Surface Decoration of Metal‐Oxide Nanoparticles,Advanced Materials Interfaces, 2017, 4(12),1700260.
[18]Zai-xing Yang, Lizhe Liu, SenPo Yip, Dapan Li, Lifan Shen, Ziyao Zhou, Ning Han, Tak Fu Hung, Edwin Yue-Bun Pun, Xinglong Wu, Aimin Song, Johnny C Ho,Complementary Metal Oxide Semiconductor-Compatible,High-Mobility,⟨111⟩-Oriented GaSb Nanowires Enabled by Vapor–Solid–Solid Chemical Vapor Deposition,ACSNano, 2017, 11(4),4237-4246.
[19]Hongchao Zhang, You Meng, Longfei Song, Linqu Luo, Yuanbin Qin, Ning Han, Zaixing Yang, Lei Liu, Johnny C Ho, Fengyun Wang,High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3nanofiber networks,Nano Research, 2017, 11(3), 1-11.
[20]Ning Han, Ying Wang, Zai-xing Yang, SenPo Yip, Zhou Wang, Dapan Li, Tak Fu Hung, Fengyun Wang, Yunfa Chen, Johnny C Ho,Controllable III–V nanowire growth via catalyst epitaxy,Journal of Materials Chemistry C, 2017, 5(18),4393-4399.
